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Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1436
DESCRIPTION *With TO-126 package *Complement to type 2SD2166 *Low collector saturation voltage APPLICATIONS *For audio power amplifier applications
PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION
*
Absolute maximum ratings(Ta=25)
SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Ta=25 PD Total power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 5 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE -30 -20 -6 -5 -10 1.5 W UNIT V V V A A
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO VCEsat ICBO IEBO hFE fT Cob PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-50A ;IE=0 IC=-1mA ;IB=0
B
2SB1436
MIN -30 -20 -6
TYP.
MAX
UNIT V V V
IE=-50A ;IC=0 IC=-4A ;IB=-0.1A
B
-1.0 -0.5 -0.5 180 120 60 390
V A A
VCB=-20V; IE=0 VEB=-5V; IC=0 IC=-0.5A ; VCE=-2V IE=50mA ; VCE=-6V; f=30MHz IE=0 ; VCB=-20V; f=1MHz
MHz pF
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB1436
Fig.2 Outline dimensions
3

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